Installation for transport and processing under a pulsating double-floating condition

ABSTRACT

Installation (10) for processing of successive wafers (26) under pulsating double-floating condition within processing gaps (174) and (176) above and underneath such wafer of an at least almost entirely sealed-off processing chamber (24) by means of a reciprocating upper chamber wall (34) immediately above this wafer, and with wafer supply and discharge toward and from this chamber also under pulsating double-floating condition.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to apparatus and methods in the field ofisolated, physically contact-free wafer processing and more specificallyto a two-sided wafer processing, enabling the combination of an optimalwafer processing of one flat side of the wafer together with anaccompanying removal of contamination from the other, opposite side ofthis wafer, as a requirement for the advanced production of wafers withfeature size of 1 μm and below.

2. Description of the Prior Art

Advanced, two-sided wafer processing, taking place within a smallestsized wafer processing chamber without any mechanical moving componentin this chamber provides an improved performance condition for suchprocessing.

Such processing as well as apparatus for practicing the two-sided waferprocessing are disclosed in Patent Applications Nos. NL-A-8601 254 andWO-A-87/04853 of Applicants.

In these apparatus a direct and continuous downward discharge, whetheror not through a wide circumferential discharge passage, takes place ofthe processing medium, supplied into the processing chamber and expelledin lateral direction from both mini wafer processing gaps of the chamberon top and underneath the wafer.

Thereby the following shortcomings of these apparatus:

1. Because of the continuous discharge, the consumption of processingmedium is considerable;

2. By solely moving the processing medium in lateral direction along thewafer surface, the processing efficiency is low;

3. In the central section of the processing gaps the processingefficiency is considerably higher than near the lateral outside of thewafer;

4. The required use of medium supply grooves in both upper and lowerwall, extending in lateral direction from these supply channels towardclose to the lateral outside of the wafer to maintain the floatingcondition, with locally at these grooves a reduced processing efficiencyof the processing medium;

5. The use of medium supply channels in the vertical sidewall of theprocessing chamber for urging gaseous medium toward the wafer edge for aphysically contact-free wafer processing and by means of wafer rotationa more uniform wafer processing; and

6. A relatively high consumption of gaseous medium.

SUMMARY OF THE INVENTION

It is an object of the invention to provide an apparatus and methods toeliminate these shortcomings.

Thereby a wall of the wafer processing chamber as central section of achamber block is reciprocal over a small distance in up and downwarddirection under vibrating action, with during at least the waferprocessing successive enlargements and narrowings of both processinggaps aside the wafer, providing during at least the main part of thewafer processing a wafer floating condition in this processing chamber,temporary at least almost sealed off, with at least almost no dischargeof the processing medium toward a circumferential discharge passage,located laterally outward this processing chamber.

Furthermore, a flexible circumferential membrane section, locatedalongside the processing chamber, connects such central vibrating wallin lateral direction with an outer section of such chamber block andwhereby at least part of the wall of such outer section functions as asealing-off wall, extending in both horizontal and lateral direction.

Furthermore, in the upper wall of the lower chamber block acircumferential discharge passage, with at least one medium dischargechannel connected therewith, is located alongside the processingchamber.

As seen from the processing chamber, this discharge passage is locatedin lateral direction beyond this circumferential membrane section.

In that way the sealing-off system for the processing chamber consistsof at least two horizontal sealing-off sections, extending in lateraldirection, with a first sealing-off section located in between theoutside of this membrane section and the circumferential dischargepassage for at least temporary providing a sealing off of thisprocessing chamber during the wafer processing, and a second sealing-offsection, located in lateral direction beyond this discharge passage, forsealing off the combination of processing chamber and discharge passagefrom the outer air during this processing.

It cannot be prevented, that during such processing processing medium isurged from this processing chamber through at least one micro leak gaptoward this discharge passage.

Per high frequency vibration such discharge volume has only to amount0.1 mm³ to already create an unallowable disturbance of the uniformwafer processing.

In addition, it must be prevented, that processing contamination canenter a leak gap in between both chamber blocks in lateral directionbeyond this discharge passage.

Now, in another favorable embodiment a circumferential gaseous lockcompartment is located in lateral direction beyond this dischargepassage.

Thereby during the wafer processing in the processing chamber in thiscompartment an overpressure of the gaseous medium is maintained withregard to the pressure in this processing chamber.

Furthermore, in between this discharge passage and this gaseous lockcompartment a cylindrical sealing-off wall section of the upper chamberblock corresponds with a sealing-off section of the lower chamber blockunder the creation of the second sealing off section during the waferprocessing.

Furthermore, the upper wall of the lower chamber block extends inlateral direction beyond this gaseous lock compartment under thecreation of a circumferential sealing-off wall section, that correspondswith a sealing-off section of the upper chamber block, providing a thirdcircumferential sealing-off section in between both chamber clocksduring the wafer processing in the sealed-off chamber.

At least during the wafer processing in this gaseous lock compartment anoverpressure of the gaseous medium is maintained, that is higher thanthe pressure in the discharge passage.

By means of this overpressure in the gaseous lock compartment a gaseouslock is created, preventing medium to leak outward from this dischargepassage.

Furthermore, this overpressure is higher than the atmospheric pressureoutside the module, preventing this outer air to enter the thirdsealing-off section in between both chamber blocks.

During the replacement of finished-off processing medium in theprocessing chamber by newly supplied processing medium, with anaccompanying discharge of this finished-off medium toward the dischargepassage, in this passage temporary a reduced pressure and possibly evena negative pressure is maintained.

Simultaneously, near a first leak gap in the first sealing-off section asecond leak gap is created in the second sealing-off section in betweenthe gaseous lock compartment and this discharge passage, with also anurging of gaseous medium from this compartment toward this passage.

As a result, a gaseous lock is maintained, preventing processing mediumto enter this second leak gap.

In addition, by means of a whirling action of this gaseous medium, urgedtoward the top of this narrow discharge passage, the removal isaccomplished of the liquid particles and therewith of even submicroncontaminants from the walls of this discharge passage.

Preferably, before the central supply of new processing medium towardthe processing chamber and/or at the end of the total wafer processing,the finished-off processing medium is expelled by means of an excess ofcentrally supplied gaseous rinse medium, and whereby the liquidparticles are atomized in this gaseous medium.

Simultaneously, an excess of gaseous medium as rinse medium is urgedfrom the gaseous lock compartment toward this discharge passage, with anideal removal of the finished-off, atomized processing medium from thispassage downward through the discharge channels, connected therewith.

By means of the pulsating action always only in the end phase of thecompression stroke, approximately 10% of the pulse time, a mainexpulsion takes place, providing an ideal opportunity to refill thegaseous lock compartment and to discharge the expelled medium from thedischarge passage.

As a result, the dimensions of this discharge passage and this gaseouslock compartment can be extremely small, with during the waferprocessing in the sealed off processing chamber a maximum availablesealing-off surface, with no unallowable forces on both chamber blocks.

During the processing, with the downward displacement of the vibratingupper chamber wall, processing medium is urged from the upper processinggap in downward direction through the processing gap aside the waferedge toward the buffer compartment underneath the membrane section.

This medium is urged against this wafer edge and at least contributes inmaintaining a physically contact-free mid-position of the wafer in theprocessing chamber.

By means of the preferably compressible medium layer in the lowerprocessing gap the wafer is uniformly and contact-free supported by thelower chamber block over its entire surface.

In addition, during the vertical displacements of the vibrating upperchamber wall also the wafer to a small extent is reciprocated.

Consequently, in the lower processing gap vertical flows of mediumtoward and from the wafer surface are accomplished.

In that way, ideally an all-sided wafer processing, such as a cleaningaction, is made possible.

Furthermore, it is also possible, that in the upper processing gap aprocessing with an aggressive medium takes place, as for instance foretching, developing and stripping, whereas simultaneously in the lowergap the bottom side of the wafer is cleaned by means of for instancedeionized water.

Instead of the supply of a combination of gaseous and liquid processingmedium, it is also possible to supply a mixture of high and low boilingliquids and whereby, depending on the pressure and temperature of thebath, the quantity of vaporized medium is determined.

Furthermore, only gaseous or vapor phase medium can be used.

It is of great importance to limit the amplitude of the vibrations ofthe chamber wall as much as possible, because of:

1. to prevent too great thrusts on the teflon lining of the lowerchamber block;

2. to restrict the maximum thrusts of the medium in the lower processinggap in downward direction onto the lower chamber block to avoid thecreation of a leak gap, with the leaking away of the processing mediumfrom the chamber; and

3. to avoid unallowable vibrations of the module itself.

Furthermore, for the optimal use of the vibration energy for inparticular the urging of processing medium toward and from the wafer, itis desirable, that the vibrating wall is as close as possible to thewafer.

Such also in view of:

1. a maximum pressurized filling of both processing gaps; and

2. a considerably reduced time for the processing, required, alsobecause of the possible high frequency of the vibrations.

Consequently, in a following favorable embodiment this apparatuscontains means for displacing the vibrating chamber wall over adistance, that is greater than that of the vibration amplitude.

Thereby, after the pressurized filling of the processing chamber and thefollowing sealing off of this chamber, by means of the lower chamberblock a subsequent compression of at least the gaseous medium withinthis chamber is accomplished by means of a downward displacement of thisvibrating upper chamber wall.

For that purpose, this apparatus is provided with a pulsator chamber asthrust compartment for such independent displacement of this vibratingupper chamber wall in vertical direction.

Thereby this pulsator chamber is connected with a supply and dischargeline for medium and by means of regulating the pressure of the medium inthis chamber the height of this chamber is changeable, providingsuccessive vertical positions of the upper chamber wall.

Furthermore, the pressure of the medium in this pulsator chamber atleast jointly determines the average pressure of the processing mediumin the processing chamber, wanted.

Furthermore, by means of the medium in this pulsator chamber, during thewafer processing in the processing chamber automatically a parallelsetting of the upper chamber wall with regard to the lower chamber wallis established.

Furthermore, in between the top of the pulsator and the module housing adamper is located for an at least jointly damping of the vibrations ofthis pulsator.

Furthermore, that for that purpose the medium in this pulsator chamberis a gaseous medium.

Furthermore, this apparatus is configured that way, that the pulsatorchamber also functions as physical pulsator, whereby successive suppliesand discharges of medium reciprocably displace this central section ofthe upper chamber block.

Furthermore, that thereby the frequency and amplitude modulation for thevibrations of the upper chamber wall consists of low, medium and highfrequent vibrations, with respectively large, medium and smallamplitudes and a possible variation thereof.

Furthermore, that as an electric pulsator is used, its lower section isintegrated with this upper chamber wall.

Due to this independent downward displacement of the vibrating upperchamber wall immediately above the wafer, the already pressurized mediumin the upper and lower processing gap is brought to a still higheraverage pressure, with consequently an increased action thereof on thewafer.

By means of this pressurized filling the difference in downward thrustof the processing medium in the lower processing gap and the upwardthrust of the thrust medium in the thrust chamber, located underneaththe processing chamber, are greatly reduced, avoiding an unallowabledeformation thrust at the seal sections for this processing chamber.

During the wafer processing, in the extremely narrow processing gapsaside the wafer the supply of medium therein for replacement of theforegoing finished-off processing medium is not wall possible, becauseof the then required high supply pressure and velocity of the medium atthe central orifices, with at these orifices a distribution of theuniform wafer processing.

By using this pressurized filling, a continuous central medium supplyunder high pressure is not required.

Furthermore, by means of an increased pressure of the medium in thepulsator chamber the vibrating chamber wall is displaced furtherdownward, with a resulting expulsion of processing medium from bothprocessing gaps.

Thereby, by means of the increased pressure of the medium in theprocessing chamber, the lower chamber block is at least locally moveddownward, with an established discharge of processing medium from thechamber.

Such downward displacement of the lower chamber block can be supportedby a simultaneous reduction of the upward thrust of the medium in thethrust chamber underneath this lower chamber block.

The medium, expelled from the processing gaps, is urged through therelatively wide circumferential chamber compartment aside the wafer edgetoward such local discharge gap.

Subsequently, the reciprocating upper chamber wall is brought to ahigher position for the central supply of replacement medium.

Thereby, by means of a reduction of the pressure of the medium in thethrust chamber, at least the first part of the supplied medium as rinsemedium is expelled from these processing gaps.

After such filling of the processing gaps with new medium, this upperchamber wall again is brought toward its lower wafer processing positionfor a following, similar wafer processing.

For removal of the submicron contamination from the submicron valleys inthe wafer topography it is desirable, that in at least the upperprocessing gap a maximum cleaning action takes place on the wafer bymeans of maximum differences in pressure of the processing medium.

For that purpose, during the processing the average height of the upperprocessing gap is kept that small, that the outer section of the waferas seal wall seals off this gap to such extent, that in this gap inalmost individual processing takes place.

Thereby, by means of a central supply of medium toward the lower gap,the average height of the upper processing gap is kept smaller than thatof the lower gap during such maximum processing.

In this way, in combination with the lagging effect of the wafer,considerably greater differences in pressure take place in the upperprocessing gap than in the lower processing gap, without affecting thelower chamber block.

In addition, by means of this lagging effect of the wafer, suchdifference in pressure in the upper processing gap during thecompression stroke of the upper chamber wall is established in less thanhalf of the total compression time.

The pressurized filling of the processing chamber now also enables theuse of at least almost solely liquid processing medium for the upperprocessing gap.

In a following favorable method, during the upward expansion stroke ofthe upper chamber wall this wall is drawn upward that fast, that thewafer, due to its mass, remains behind, with the creation of evensubmicron vacuum bubbles in the exploding liquid medium, also within thesubmicron valleys of the wafer upper side.

Furthermore, during the compression stroke the liquid medium under ahigh velocity is urged toward the wafer, at first still moving upward,with by means of an imploding action a hefty affecting of the boundarylayer immediately above the wafer.

As a result, this micro boundary layer is dissolved and an expulsion ofmedium, including eventual contamination, takes place from the wafervalleys.

Consequently, in case of wafer cleaning, a very aggressive cleaningaction of the upper processing side of the wafer occurs.

The total volume of the processing mediums in both processing gaps isvery restricted and amounts only 0.5 to 1 cm³ for a 6" wafer.

As for the wafer processing a replacement of this processing mediumtakes place only a few times, the total consumption of medium and inparticular of liquid medium is extremely low, which is of greatimportance in case of explosive, poisonous and highly aggressiveliquids.

Thereby the use of liquid thrust medium in the thrust chamber underneaththe lower chamber block enables the required vertical positions of thisblock as part of the wafer supply- and discharge system toward and fromthe processing chamber and the wafer processing.

Due to the established spreading of the mixture of processing mediums inlateral and radial direction by means of the repeated compressing andexpanding actions of both processing gaps, in the upper and lower wallof the processing chamber no medium supply grooves, extending from thecentral orifices in lateral direction, are required.

In addition, the whether or not flat orienting side of the wafer has nonegative effect on the double-floating condition and the contact-freewafer position in lateral direction and no additional thrust medium hasto be urged toward the wafer to obtain a uniform wafer processing bymeans of wafer rotation.

In addition, the apparatus contains means for displacing a wafer, to beprocessed, from a robotic wafer sender under floating condition towardan at least almost centric position thereof with regard to theprocessing chamber.

In a following favorable embodiment the vertical sidewall of theprocessing chamber is used as wafer stop for in the end phase of thewafer displacement over the lower chamber block the establishing of thisat least almost centric position.

Furthermore, that in at least the end phase of the wafer displacementtoward this chamber the upper chamber wall vibrates for slowing down thewafer velocity by means of established flows of medium in verticaldirection toward and from the wafer.

Further favorable characteristics of the apparatus follow from thedescription of the Figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a transverse sectional view of the wafer transfer andprocessing apparatus according to the invention and wherein anelectromagnet pulsator is used.

FIG. 2 is the apparatus according to FIG. 1, with therein the locationof a piezo pulsator.

FIG. 3 is a sectional view over the line 3--3 of the apparatus accordingto FIG. 1.

FIG. 4 is an enlarged sectional view of the processing chamber with itssealing-off structure and whereby the lower chamber block together withthe wafer has arrived in its end phase of upward displacement and thiswafer is brought into a double-floating condition.

FIG. 5 is the sectional view according to FIG. 4 in a sealed offcondition of the processing chamber.

FIGS. 5^(A) through 6^(D) show much enlarged a section of the processingchamber, whereby by means of at least gaseous medium wafer processingtakes place, with an upward displacement of the upper chamber wallduring the expansion stroke in successive phases thereof.

FIGS. 7^(A) through 7^(D) show the chamber according to the FIGS. 6^(A)through 6^(D) during the compression stroke of this upper chamber wallin successive phases thereof.

FIGS. 8^(A) through 8^(C) show very much enlarged a section of thechamber and the successive phases of the processing according to FIGS.6^(A) through 6^(C).

FIGS. 9^(A) through 9^(C) show very much enlarged a section of thechamber and the successive processing phases according to the FIGS.7^(A) through 7^(C).

FIGS. 10^(A) through 10^(E) show the processing chamber according toFIG. 8^(C), with during the processing a continued downward displacementof the upper chamber wall during its upward expansion stroke.

FIGS. 11^(A) through 11^(E) show the processing chamber according toFIGS. 10^(A) through 10^(E) during the compression stroke of this upperchamber wall.

FIGS. 12^(A) through 12^(E) show for the chamber according to FIG.11^(E) successive phases of the expansion stroke of this upper chamberwall.

FIGS. 13^(A) through 13^(E) show for the chamber according to FIGS.12^(A) through 12^(E) successive phases of the compression stroke of theupper chamber wall.

FIGS. 14^(A) and 14^(B) show the pressurized filling of the upper waferprocessing gap of the apparatus according to FIG. 1 with liquid medium.

FIGS. 15^(A) through 15^(C) show the wafer processing of the apparatusaccording to the FIGS. 14^(A) and 14^(B), with successive downwardpositions of the upper chamber wall during its compression stroke.

FIGS. 16^(A) through 16^(C) show the successive wafer processings of theapparatus according to the FIGS. 15^(A) through 15^(C) during thecompression stroke of this wall.

FIGS. 17^(A) through 17^(C) show the pressurized filling of the upperprocessing gap of the apparatus according to FIG. 1 with the combinationof liquid and gaseous processing medium.

FIG. 18^(A) shows much enlarged the upper processing gap at theprocessing side of the wafer, with the urging of the liquid mediumtoward the wafer, as is indicated in the FIG. 15^(C).

FIG. 18^(B) shows the gap section according to FIG. 18^(A), with theurging of liquid medium from the wafer.

FIG. 19^(A) shows the gap section according to FIG. 18^(A), with theurging of the combination of gaseous and liquid medium toward the wafer.

FIG. 19^(B) shows the gap section according to FIG. 18^(A), with thewithdrawal of the combination of gaseous and liquid medium from thewafer boundary layer.

FIGS. 20^(A) and 20^(B) show much enlarged a section of the processingchamber according to FIG. 17^(C) in the start and end phase of thecompression stroke of the upper chamber wall in a downward pressurizedfilling position thereof.

FIGS. 21^(A) and 21^(B) show the processing chamber according to FIGS.20^(A) and 20^(B) in an upward pressurized filling position thereof.

FIG. 22 is a much enlarged detail of the processing chamber during thewafer processing, with therein by means of the pulsating processingmedium the urging of the excentrically positioned wafer toward a centricposition thereof during the downward displacement of the upper chamberwall.

FIG. 23 shows the detail according to FIG. 22, with by means of theprocessing medium the urging of the excentrically positioned wafertoward a centric position thereof during the upward displacement of theupper chamber wall.

FIG. 24 is an enlarged detail of the processing chamber of the apparatusaccording to FIG. 1, with wafer supply from a transfer arm.

FIG. 25 is the detail according to FIG. 24 and whereby the front end ofthe wafer is swiveled upward by means of the gaseous cushion.

FIGS. 26^(A) and 26^(B) show much enlarged the supply passage toward theprocessing chamber at the membrane section, with therein the back end ofthe wafer still present during the upward expansion stroke of thedownward compression stroke of the upper chamber wall.

FIG. 27 shows much enlarged the front end of the processing chamber,with therein the upward displacement of the front end of the wafer.

FIG. 28 shows the front end of the chamber according to FIG. 27, withthe upwardly displaced wafer front end near the vertical side wall ofthe chamber as wafer stop.

FIG. 29 is the detail according to FIG. 24, with therein the establishedwafer stop within the processing chamber.

FIG. 30 is the detail according to FIG. 29, with the ending of thefloating condition for the wafer for the downward displacement of thecombination of block and wafer to its lowest transfer position.

FIG. 31 is the apparatus according to FIG. 1 in adapted form located atthe entrance of a main wafer processing module.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIGS. 1, 2 and 3 the wafer processing apparatus 10 is shown, consistingmainly of processing module 12, sender cassette 14, receiver cassette 16and the wafer transfer unit 18.

The processing module mainly consists of the lower chamber block 20,upper chamber block 22, processing chamber 24 in between for processingof the wafer 26, the circumferential discharge passage 28 for dischargeof the processing medium 30, the gaseous lock compartment 48 alongsidethis passage 28, the pulsator 32 for the reciprocation of the centralsection 34 of the upper chamber block in up- and downward direction, andthe thrust chamber 36 for an up- and downward displacement of this lowerchamber block.

The wafer transfer unit 18 for horizontal wafer transfer consists of thedisplacer 38, located in the support block 40, transfer arm 42 with thewafer hold block 44, chord 46 and two rolls for coupling this transferarm with the piston 52, displaceable within the recess 54 of the supportblock 40.

The arm 42 is made of PFA and is reinforced with the metallic support610. In addition, this arm with its extension 612 extends beyond blocksection 44 and whereby in this extension the roll unit 614 is located.

Thereby during the wafer transfer this roll-unit is displaced over theguide track 616 of the block 40, providing the correct take-over andtransfer positions of the block 44 in vertical direction.

By means of vacuum thrust a wafer 26 from the sender cassette issuctioned onto the receiver section 66 of the block 44 for transferthereof toward the processing module 12, whereas simultaneously a wafer26' from the processing chamber 24 by means of a vacuum thrust issuctioned onto the wafer discharge section 68 of this block for transferthereof toward the receiver cassette 16.

In the lower chamber block the central supply channel 70 for processingmedium 30 is located, whereas in the upper chamber block 22 also thesupply channel 72 for whether or not processing medium 30 or gaseousmedium 78 or for both mediums is located.

Furthermore, the supply lines 74 and 76 are connected with the gaseouslock compartment 48 for supply of gaseous medium 78.

These lines are connected with two compartments 618, located in the sealblock 90.

The lower chamber block 20 consists of the flexible bellow section 92and the central section 88, whereby for this block and the upper chamberblock 22 preferably teflon PFA, to a sufficient extent resistant to theprocessing medium, at least as a lining is used.

Thereby the lower end of the bellow section 92 is airtight mounted ontothe support block 40, whereas the central section 88 contains the nondeformable metal core 96.

The enclosure ring 94 thereby provides both an air tight connection andan enclosure in lateral direction of this bellow section 92.

During the wafer processing, with an accompanying increased pressure ofthe processing medium 30 in the chamber 24 and of the thrust medium 104in the thrust chamber 36, this ring encloses this bellow section inupward direction.

The discharge passage 28 is through a number of lines 120 connected withthe common discharge compartment 130, located in the seal block 90.

This block 90, with its extension 100, provides a guidance for theextension 102 of the lower chamber block 20.

The thrust medium 104 is periodically supplied through the centralsupply channel 106 into thrust compartment 108, and from there throughgrooves 110 into chamber 36.

Consequently, the total column of thrust medium 104 over the entirecircumference of the lower chamber block 20 is available for its urgingagainst the upper chamber block 22.

In the upper chamber block alongside the central recess as processingchamber 24 the circumferential recess 126 is located, with underneaththe membrane section 128.

As a result, the central block section 34 to a small extent isreciprocably displaceable with regard to the outer section 132.

The PFA lining 622 as part of the central block section 34 also extendsin lateral direction toward the lateral outside of this section 132 aswafer transfer- and sealing-off wall and so uninterruptedly from theentrance side 298 toward the exit side 300 of the module 12.

Within the scope of the invention this lining can also consist of anyother suitable material.

By means of a great number of mini dovetailed grooves 630 the PFA liningof the lower chamber block 20 is anchored onto the non deformablesection 96.

The fabrication of this block takes place by means of a press-process,whereby the non deformable sections are brought in and subsequently thelining under high pressure and temperature is molded and anchored,whereafter a machining of this lining takes place toward its finalshape.

Within the scope of the invention any other manufacturing of the block,such as the appliance of the teflon onto the upper chamber block 22 bymeans of a spray process, and whether or not in addition, is possible.

Also because of the small width of both discharge passage 28 and gaseouslock compartment 38, the contact surface between both chamber blocks 20and 22 is relatively large.

In addition, the central section of the lower chamber block 20 overalmost its entire surface is carried ty the non deformable section 96.

Consequently, the established difference in pressure between the thrustmedium 104 in the chamber 36 and the processing medium 30 in theprocessing chamber 24 is spread over this contact surface, with nounallowable deformation of the thin walled teflon lining.

The PFA seal- and bellow section 88/92 of the lower chamber block 20 isreinforced with a woven layer of stretch resistant material.

In FIG. 1 the electro-magnet pulsator 32 by means of the circumferentialbuffer block 666 and in between glue-connections is anchored against thebottom side of the upper cap 140, with the creation of a sealed-offthrust compartment 668.

Through nipple 682 this compartment 668 is connected with the supplyline 690 for gaseous medium 70 and whereby in this line the regulatorvalve is located.

By means of regulating the supply and discharge of the gaseous medium 78an adjustment of the pressurized filling of this compartment with thismedium 78 is accomplished.

By adjusting the pressure of this medium the height of this compartmentcan be set from a minimum, preferably smaller than 0.1 mm, toward amaximum, larger than 0.2 mm.

In this way the position in vertical direction of the stator 674 of theelectro-magnet pulsator 32 is adjustable and consequently the positionof the upper chamber block section 34, which by means of a glueconnection is secured to the yoke 684 of this pulsator.

In between this stator and the yoke the mini gap 672 is located.

By means of a supply of gaseous medium 78 toward this thrust compartment668 the whether or not vibrating block section 34 as upper chamber wallis lowered, to establish the pressurized filling with processing mediumof the sealed off processing chamber.

Thereby the gaseous medium 78 within this compartment in combinationwith the buffer block 666 also functions for damping the vibrations fromthis pulsator toward the module housing 40/132.

The gaseous medium 78 in the pulsator chamber 142 has a pressure, thatapproximately corresponds with the pressure within the thrustcompartment 668.

The average pressure in the extremely narrow gap 672 in between thestator 674 and the yoke 684 approximately corresponds with the pressureof the medium 78 within the thrust compartment 668 and immediatelyfollows any change of this pressure.

The height of this gap 672 depends on the electric energy with regard tothe difference between the positive and negative part of the alternatingcurrent, supplied by the modulator 632.

Thereby during the processing the height of this gap is approximatelytwo times greater than the amplitude of this vibration.

In this way jointly by means of the pressurized medium 78 within thismini gap a pressurized filling of the processing chamber with medium 30is made possible.

The medium 78 in the pulsator chamber 142 also functions as coolant forthis pulsator and whereby by means of regulator valve 640 in thedischarge line 688 the velocity of this medium, flowing through thischamber, is adjustable.

For that purpose, in the stator 674 this cooling channels 676 arelocated.

By means of the medium 78 within the thrust compartment 668 and thechamber 142 and in particular within the cap 672, in combination withthe reciprocation of the central block section 34 as upper chamber wall,this upper wall over its entire wafer surface is uniformly displaceddownward, with over this wafer surface an at least approximately thesame height of each of the processing gaps 174 and 176, see also FIG. 5,as a requirement for a uniform processing of such wafer.

During the wafer processing in the sealed off processing chamber, withthe establishment of a certain average processing pressure within thischamber, by means of sensor 636 impulses are forwarded toward theregulator valve 436 in the supply line for the thrust chamber 36 formaintaining a sufficient high sealing-off pressure of the thrust medium104 in this chamber.

Expulsion of processing medium 30 from the chamber 24 takes place bymeans of a continued supply of medium toward the thrust compartment 668,with consequently a downward displacement of the pulsator 32 andtherewith of the upper chamber wall 34, with an established additionalpressure increase of the processing medium 30 in this processingchamber.

Beyond a certain pressure in this chamber 24 at least locally a leak gapin between the blocks 20 and 22 is created, with a resultant expulsionof processing medium therethrough toward the discharge passage 28.

Thereby, due to a continued downward displacement of the upper chamberwall 34, at the end an almost total expulsion of the processing mediumfrom the processing chamber is established and for that purpose at leastin the end phase of such downward displacement of this upper wallpreferably the amplitude of the vibrations is reduced.

Furthermore, it is also possible, that such expulsion of processingmedium at least jointly takes place by means of an enlargement of theheight of the mini gap 672 in between the stator and the yoke by acontinued enlargement of the positive part of the alternating current.

In FIG. 2 the piezo pulsator 32' by means of the flexible sleeve 666' isenclosed within the pulsator chamber 142', with in between the mountingblock 692.

Thereby the creation of the sealed-off thrust compartment 668'.

Here too, by adjusting the pressure of the medium 78 for thiscompartment by means of valve 670, the height of this compartment isadjustable upward from a minimum.

Consequently, through this piezo pulsator the vertical position of theblock 34 varies.

The pulsator chamber 142' is connected with a not indicated supply anddischarge line for gaseous coolant 78. Thereby in this piezo pulsatorthe cooling channels 694 are positioned.

Furthermore, the block section 34' is glued against the lower plate 696of this pulsator, with in between the channels 698 for the coolant.

Here also, the at least jointly damping of the vibrations of thispulsator by means of the gaseous medium 78 within the compartment 668',and the by means of this medium accomplished vertical setting of theupper chamber wall 34 on a uniform distance toward the lower chamberblock 20 for a uniform wafer processing.

Such precise setting is essential, because the vibration amplitudes ofthe piezo pulsator are minimal, for instance only 5 μm, with a frequencyof 40,000 Herz.

Furthermore, because for an effective wafer processing the upperprocessing gap 174 often must have a minimum height of less than 15 μm.

Furthermore, in a following favorable method of wafer processing anddamping of the vibrations toward the module housing for both pulsators32 and 32' a combination of at least two vibrations take place.

These series of vibrations, including low frequency vibrations, areaccomplished by changing the positive and negative parts of thealternating current at a low frequency, for instance 1,000 Herz.

The medium sized frequency and amplitude of these vibrations areadjustable, whereby this second vibration functions as carrier vibrationfor the high frequency vibrations, super-imposed thereon, providingmodulated vibrations for frequency and amplitude.

In FIG. 2 the supply line 700 for processing medium 30/78 is shown.

This module functions as an all-sided wafer cleaner, whereby suchcleaning takes place under a pulsating double-floating condition.

Thereby, due to the small amount of medium, required for the upperprocessing gap, the inside diameter of this supply line is minimal, lessthan 0.2 mm, so that this line to a sufficient extent is capillary tocontain liquid medium 30.

Such also by means of the check-valve 702, located in this supply lineimmediately above the entrance 72.

Supply of gaseous medium 78 through valve 704 into this supply lineenables the pressurized filling of the processing chamber and thereplacement of finished-off medium 30.

Subsequently, after such established pressurized filling, by means ofthe membrane pump 706 at least jointly a first medium 30 is urged intothis supply line.

Thereby a relatively very limited supply, only approximately 10 mm³ persecond.

This medium 30, urged through the orifice 72 into the upper processinggap 174, thereby gradually expels the gaseous medium 78 from this cap inlateral direction toward the buffer compartment 184 aside the waferedge.

During such injection of liquid medium 30, by means of the regulatorvalve 670 gaseous medium 78 is urged toward and from the thrustcompartment 668', with and established additional vibration of the upperchamber wall at a low frequency, approximately 20 Herz and with a greatamplitude, approximately 30 μm.

Due to the accomplished additional pressure increase in at least thisupper gap 174, medium is expelled therefrom and gathered in the buffercompartment 184.

Beyond a maximum pressure of the medium in this compartment 184, whichis determined by the upward thrust of the thrust medium 104 in thethrust chamber 36, the lower chamber block 20 at least locally is urgeddownward over a micro distance and whereby medium from this buffercompartment through a than created leak gap is urged toward thedischarge passage 28.

By means of such modulated vibration such discharge takes placerepeatedly.

After some time, an at least total filling of this upper gap 174 withthis liquid medium 30 has taken place, resulting in the in FIGS. 15 and16 shown medium flows and the entering of the buffer compartment 184 bythis medium.

Medium 30 is also urged from this buffer compartment into the lowerprocessing gap 176, with a mixing thereof with the gaseous medium 78,already present therein.

For replacement of this liquid medium, subsequently through both centralorifices 70 and 72 a supply of gaseous medium 78 into both gaps takesplace, with a gradual urging therefrom jointly by means of a whether ornot temporary reduction of the pressure of the medium 104 in the thrustchamber 36.

Thereby already at a lower pressure of the medium in the processingchamber a downward displacement of the lower chamber block isaccomplished under the creation of a circumferential discharge gap.

After such expulsion of the medium 30, by means of the membrane pump 708less aggressive liquid medium 30', as for instance de-ionized water, isinjected into this supply line 700 and consequently through the orifice72 into the upper processing gap 174.

The check-valves 710 and 712 thereby prevent the urging of this mediumthrough the line section 716 in the direction of the supply 702 for thegaseous medium 78 and the supply 706 for the liquid medium 30.

Within the scope of the invention directly liquid medium 30' can besupplied into this gap for replacing the liquid medium 30. Such insteadof the supply of gaseous expulsion medium 78 into the upper gap 174.

In FIGS. 6 and 7 the processing chamber 24 is much enlarged and in FIGS.8 and 9 very much enlarged shown in detail.

Thereby the central block section 34 vibrates under a high frequency,5,000 Herz, with a small vibration amplitude, approximately 20 μm.

In FIGS. 6^(A) and 7^(A), with a by means of the lower chamber block 20accomplished sealing-off of the processing chamber 24, the upper chamberwall 34 by means of supply of medium into the thrust compartment 668 andthe pulsator chamber 142 is moved downward from its upper wafer transferposition, see also FIGS. 8^(A) and 9^(B).

In FIGS. 6^(B) and 7^(B), see also FIGS. 8^(B) and 9^(B), suchpressurized filling of the processing chamber toward the wanted levelhas taken place.

In FIGS. 7^(B) and 9^(B) thereby the compression stroke, and in FIGS.6^(B) and 8^(B) the expansion stroke of this upper chamber wall 34 istaking place.

During this compression stroke, in the upper gap 174 highly pressurizedprocessing medium 30 is urged toward the processing side 190 of thewafer 26, with simultaneously by means of the established downwarddisplacement of this wafer an urging of medium 30 in the lower gap 176toward the lower side 664 of this wafer.

Thereby, also due to the lagging effect of the wafer in the start phaseof the compression stroke, by means of the still upward displacing ofthis wafer within a short time a considerable increase of the pressurein the upper gap 174 takes place, see FIGS. 20^(A) and 21^(A), with aresulting very hefty action of the processing medium on the wafertopography 190.

Furthermore, due to this lagging effect of the wafer in the start phaseof the expansion stroke, with the still continued downward displacementof the wafer, within a short period of time a considerable decrease inpressure is taking place in the upper gap 174, with a resulting escapeof medium from the micro boundary layer immediately above the wafer, seealso FIG. 19^(B).

Due to the minimum height of both processing gaps 174 and 176 during theprocessing, less than 50 μm, in combination with the high vibrationfrequency, during the compression stroke the expulsion of processingmedium form these gaps toward the compartment 184 aside the wafer edgeand the buffer compartment 134 is very limited and takes place almostexclusively from the outer gap sections 652 and 654, as shown in FIG.7^(B).

During the expansion stroke medium under overpressure is urged form thebuffer compartments 134 and 184 back into these gap sections 652 and654, as is shown in FIG. 6^(B).

In FIGS. 6^(C) and 7^(C), and much enlarged in FIGS. 8^(C) and 9^(C),the upper chamber wall 34 is moved further downward, with an increasedcompression of the pressurized filling in both gaps 174 and 176.

Thereby a still heftier action of the vertical flows of medium 30 on thewafer surfaces 190 and 664 is taking place, with an entering of even thesubmicron valleys 192.

After the processing has taken place for a certain period of time, theupper chamber wall 34 is moved further downward, with due to the furtherdiminution of both processing gaps, an increased pressure of theprocessing medium.

Consequently, at last the lower chamber block 20, its upper wall beingparallel with this upper chamber wall 34, is urged downward under thecreation of a circumferential discharge passage in between this lowerchamber block and the upper chamber block 22, and by means of the highfrequency vibrations of the upper chamber wall a highly variabledischarge of processing medium from the buffer compartment 184 throughthis discharge duct is taking place.

This compartment is fed with expelled medium from these processing gaps.

Such expulsion of processing medium toward the discharge passage can besupported by a temporary small discharge of thrust medium 104 from thethrust chamber 36, with an established decrease in pressure in thischamber.

Within a very short period of time, for instance only 0.05 second,thereby approximately 0.2 cm³ medium is expelled, with an establishedrelatively considerable height of this circumferential discharge gap,approximately 10 μm.

By means of this expelling medium, at first an expulsion of residuemedium, possibly containing micro contamination, is taking place fromthe cylindrical buffer compartment 184.

Simultaneously, gaseous rinse medium 78 is urged from the gaseous lockcompartment 48 through a circumferential gap toward this dischargepassage, with a discharge of the mixture from this discharge passagethrough the discharge lines.

A great number of successive up and downward displacements of this upperchamber wall thereby establish successive expulsions of continuedcleaner medium from these processing gaps 174 and 176 toward thisdischarge passage 28.

In FIGS. 6^(D) and 7^(D) the upper chamber wall is moved upward again bymeans of a pressure reduction in the thrust compartment 668 and thepulsator chamber 142.

Subsequently, by new supplied medium, the expulsion of residue mediumfrom these gaps 174 and 176 toward the buffer compartments 134 and 184and eventually the discharge passage 28 is taking place, together with afilling of these gaps with this fresh medium.

Such expulsion medium at first can be solely gaseous medium, withsubsequently the injection of a certain amount of liquid medium into atleast the upper gap 174, whereby this medium jointly by means of thevibrations is uniformly spread over such gap.

Thereupon, the wafer processing in the processing chamber 24 repeatswith this fresh medium.

Due to the limited volume of the discharge medium, such refreshmentsrepeatedly take place for an optimal wafer processing.

In FIGS. 8^(C) and 9^(C) imaginary is shown, that for a wafer processingunder an increased whirling action of the processing medium the upperchamber wall is provide with a mini undulation, which, within the scopeof the invention, can have any other profile.

In FIGS. 10^(A) through 10^(E) and 11^(A) through 11^(E) such waferprocessing, with a continuous further downward displacement of thecentral block section 34, is successively shown.

In FIGS. 12^(A) through 12^(E) and 13^(A) through 13^(E) thereby thepositive lagging effect of the wafer 26 on the high pressure waferprocessing according to FIGS. 10^(E) and 11^(E) is shown.

Thereby in FIG. 12^(B), still at the start of the downward displacementof the block section 34, a continued upward displacement of the wafer26, due to this lagging effect, providing already in the first half ofsuch compression stroke an increased pressurizing of the medium withinthe upper processing gap 174.

Thereby a shock-wave action of this medium takes place, with anincreased action of it on the wafer topography 190, in particular in thesecond half of this compression stroke, see FIGS. 12^(C), 12^(D) and12^(E).

In FIG. 12^(F) by means of an increase of the pressure in the thrustcompartment 66B and whether or not by means of discharge of thrustmedium from the thrust chamber 36, through which the block 20 over amicro distance is displaced downward, again expulsion takes place of thefinished-off medium 30 from both processing gaps 174 and 176.

In FIGS. 13^(A) through 13^(E) the lagging effect of the wafer duringthe expansion stroke of block section 34 is shown.

Thereby at the start of this upward expansion stroke a still continueddownward displacement of the wafer 26.

In FIGS. 14, 15, 16 and 18 wafer processing in the upper gap 174 atleast almost solely with liquid medium 658 takes place.

In FIG. 14^(A) for that purpose the supply of this liquid medium 658takes place through the central orifice 72, whereas through the centralorifice 70 the medium 30, consisting of gaseous medium and whether ornot in combination with vaporized or liquid medium, is supplied towardthe lower gap 176.

Within the scope of the invention any type of liquid medium for any typeof wafer processing is possible, such as for cleaning, etching,stripping and developing.

The block section 34 thereby is in its upper position, with a minimalamplitude of the vibrations.

FIG. 14^(B), with a stopped medium supply, and in at least almost theupper position of the lower chamber block 20, expulsion of the liquidmedium 658 from the upper gap 174 takes place through the buffercompartments 134 and 184 toward the discharge passage 28, with also to asmall extent the expulsion of processing medium form the lower gap 176toward this discharge passage.

In FIGS. 15 and 16 wafer processing with the mediums 658 and 30 takesplace in the processing chamber 24, which by means of this lower chamberblock is hermetically sealed off.

In FIG. 15^(A), during the compression stroke, the block section 34 ismoving downward. However, due to the relatively great mass of the wafer,it continues to move upward, because of the applied upward thrust of themedium 30 in the lower gap 176 thereon during the foregoing expansionstroke of this block section 34.

Due to this expansion stroke, together with the fast upward displacementof the block section with regard to that of the wafer, in this upper gap174 vacuum bubbles 660 are accomplished under exploding action.

Thus, at first in gap 174 these vacuum bubbles are at least for thegreater part thereof disposed of, see FIG. 15^(B). Thereby underimploding action an urging of atomized liquid particles under arelatively high pressure and velocity into the submicron valleys 192,which are located in the upper wall 190 of the wafer as wafer processingside, see also FIG. 18^(A).

In the end phase of the displacement of block section 34, as is shown inFIG. 15^(C), the wafer 26 is further moved downward by this blocksection and the column liquid 658 in the upper gap, with a maximumcompression of the compressible medium 30 in the lower gap 176.

This medium thereby functions as a buffer for absorbing and slowing downthe established, relatively fast wafer displacement in downwarddirection.

In FIG. 16^(A), with the subsequent upward expansion stroke of the blocksection 34, at first still a continued downward displacement of thewafer takes place, because of the foregoing applied thrust of the medium658 thereon in downward direction.

Due to the considerable tractive power of the pulsator on this block 34,the film liquid 658 is dissolved, under the creation of submicron vacuumbubbles by exploding action, also within the valleys 192, see FIG.18^(B).

The liquid medium 658 therefore preferably has a low cohesion andadhesion coefficient.

Thus, an effective removal of the boundary layer 662 immediately abovethe wafer 25 occurs, see FIG. 18^(B).

In case of wafer cleaning, thereby an effective cleaning of suchsubmicron valleys take place, whereby for instance during 1 second5000-40,000 repeats of such cleaning cycle occur.

In particular by means of the great amplitude, for instance 10 μm, ofthe pulsator vibrations, the established thrusts of the medium 658 onthe wafer topography 190 are great, however, without any damage of thewafer, because through a micro gaseous cushion its entire lower wall issupported by the lower chamber block.

Due to the also established considerably vertical reciprocations of thewafer 26, also in the lower gap 176 an effective processing of the lowerside 664 of the wafer takes place.

Another favourable method of processing is shown in FIGS. 17, 19, 20 and21.

After the central injection liquid medium 658 into the upper gap 174,see FIG. 17^(A), the central block section 34 to a small extent is movedupward, see FIG. 17^(B).

Consequently, in particular during the upward expansion stroke of thisblock section the suctioning of at least gaseous medium 78 from thebuffer compartment 184 aside the wafer 26 takes place.

Within the scope of the invention also, and whether or not additionally,the injection of a small volume of gaseous medium, for instance 10 mm³,through the central supply orifice 72 can take place.

In this way, within the upper gap 174 a liquid-rich mixture isestablished.

Within the scope of the invention it is also possible to centrallysupply such liquid-rich mixture.

After the subsequent downward displacement of the block section 34, thewafer processing takes place within the hermetically sealed off chamber24.

In FIGS. 20^(A) and 20^(B) thereby the phases of the compression stroke,with at first a still upward displacement of the wafer, are shown.

Here too, in the end phase of this compression stroke a hefty action ofthe medium mixture 658/78 on the wafer upper side 190 takes place.

Thereby, due to the hefty micro whirling action of this mixture, also anentering of even such submicron valleys 192 by this mixture isaccomplished, see FIG. 19^(A).

During the subsequent, not shown expansion stroke of the block section34, due to the sharp pressure reduction in such submicron valleys, apartly expulsion of medium under whirling action occurs, see FIG.19^(B).

In the combination of FIGS. 20 and 21 is shown, that thereby during thewafer processing also the vertical position of the block section 34 canvary independent of its vibrations, for in particular an optimalcleaning of the submicron valleys.

Within the scope of the invention any type of pulsator and any sizethereof, depending on the required vibration energy, are possible.

In FIG. 24 the wafer 26 under floating condition is moved from thesender section 66 of the transfer block 44 in the direction of theprocessing chamber 24.

Thereby, for maintaining this floating condition, a supply of gaseousmedium 78 through the supply orifices 70 and 74, located in the lowerchamber block, takes place.

The flow of medium from the orifice 70 is urged in a sloped directiontoward this wafer, thereby providing the small required thrust on thiswafer in the direction of the wafer stop 556 in this chamber 24.

In the shown wafer position the sensor 554 has observed the passingthrough of the wafer, and whereby by means of an inpuls toward a valvein the supply line 70 the supply of medium in this end phase of waferdisplacement is enlarged.

The back end 450 of the wafer thereby still is within the relativelynarrow supply passage 558, with due to the vibrating gaseous medium inthe gap 454 above the wafer still the maintaining of the floatingcondition for this wafer, as shown in FIGS. 26^(A) and 36^(B).

However, the front end 456 of the wafer, due to this upward thrust ofthe gaseous medium, is moved upward over a small distance, as shown inFIGS. 25 and 27.

The vibrating upper chamber wall 34 thereby provides a whirling actionof the gaseous medium 78 in the processing chamber, and such inparticular in the lower gap, with a uniform spreading of the medium overthe wafer surface and a considerable slowing-down effect of this mediumon the wafer.

By means of successive supplies and discharges of a small amount ofliquid thrust medium 104, approximately 3 cm³, toward and from the thustchamber 36, see FIG. 1, also the lower chamber block is reciprocatedover a small distance, approximately 0.1 mm.

In addition, the upper chamber wall 34 is also reciprocated with a lowfrequency and a relatively great amplitude, approximately 0.1 mm.

Such is shown in FIGS. 26^(A), 26^(B), 27 and 28.

In FIG. 26^(A) thereby an upward displacement of the upper chamber wall34 and a downward displacement of the lower chamber block 20 take place,with an established negative pressure within both gaps 452 and 454,whereas in FIG. 26^(B), during the downward compression stroke of thisupper chamber wall 34 and the upward displacement of the lower chamberblock, a compression of this medium occurs in these gaps.

Consequently, for the wafer back end 450 a double-floating condition istemporarily maintained.

The wafer front end 456 however, is moved upward toward such level, thatwith a continued wafer displacement the wafer front side 562 comes to astop against the vertical sidewall 556 of the processing chamber 24, asis shown in FIGS. 28 and 29.

The slowing-down action of the reciprocating flows of medium on thewafer thereby prevents the moving backward of the wafer over a distancemore than 1 mm, and at the end this wafer comes to a rest positionagainst this wall.

Thereby the lower section 570 of this sidewall 556 is conical for aneventual guidance of the wafer toward its position within this chamber.

Subsequently, the lower chamber block 20 is moved upward, as shown inFIG. 30, with a centric position of the wafer within the chamber 24,whereafter the supply of medium 78 toward the lower chamber block isstopped, with a temporary dissolving of the floating condition for thewafer.

Subsequently, the combination of block 20 and wafer by means of adischarge of medium 104 from the chamber 36, is moved toward its lowestposition, to enable the transfer block 44 to move toward its waferreceive position at the other side of the module.

In FIG. 31 the wafer processing apparatus 10 with its exit 202 isconnected with the main processing module 204. Thereby by means of thetransfer arm 42 a processed wafer 26' is brought onto successivepositions 206 of the turntable 208 within this module 204.

Thereby in this apparatus 10 an all-sided wafer cleaning takes place.

The same apparatus can also function for the post treatment of thewafer, such as cleaning, etching, stripping or developing, and wherebythis wafer is supplied from such module 204, with the side 202 being theentrance side.

Within the scope of the invention any other type and method of wafertransfer is possible.

Furthermore, within the scope of the invention the apparatus can containmore than one module.

Furthermore, in at least one of the walls of the processing chamber aheating element for instance proximity- or de-hydration bake can belocated.

Furthermore, such oven bake of the wafer can take place in successivemodules, with a subsequent cooling-off in following modules.

Furthermore, in any of the shown processing modules of the apparatus andin a whether or not adapted form, the following wafer processing inwhether or not a combination thereof can take place:

cleaning, ultrasonic cleaning, megasonic cleaning, plasma cleaning;

developing;

etching, plasma etching;

stripping, plasma stripping;

oven bake, including micro-wave oven - and hot-plate oven bake;

dopant processing;

chemical vapor deposition;

physical vapor deposition, plasma deposition;

deposition of coatings in vapor or gaseous phase, vacuum deposition ofprimers in vapor phase;

oxidation systems; and

wafer testing, measuring, inspection and marking.

Thereby, for instance in a first module an all-sided cleaning of thewafer and in a following module proximity bake or even de-hydration bakeof the wafer.

Furthermore, the pulsator can be arranged in a single or multipleversion, whether or not located underneath the lower chamber block andhaving any size.

We claim:
 1. Apparatus in the form of a module for transfer andprocessing of wafers comprising:a. a supporting base; b. a combinationof lower chamber block and upper chamber block, superposed upon saidbase so as to define a wafer processing chamber between the chamberblocks; c. a reciprocal wall defined in at least one of said chamberblocks so as to abut a portion of said processing chamber; d. acircumferential membrane arranged along the periphery of said waferprocessing chamber, so as to at least temporarily seal said processingchamber circumference; and e. a pulsator attached to said reciprocalwall so as to at least temporarily reciprocate a portion of saidreciprocal wall and thereby vary the height of said processing chamberduring processing.
 2. Apparatus in the form of a module for transfer andprocessing wafers as in claim 1, further comprising at least during thewafer processing a supply of pressurized gaseous medium communicatingwith said processing chamber so as to support a wafer in contact-freedouble floating condition within said processing chamber.
 3. Apparatusin the form of a module for transfer and processing of wafers as inclaim 1, at least one of said chamber blocks including a central sectionhaving a compression/decompression chamber at least temporarily suppliedby pressurized thrust medium, so as to reciprocate said central sectionand thus a wall of said processing chamber to successive verticalpositions.
 4. Apparatus in the form of a module for transfer andprocessing wafers as in claim 3, including means for at leasttemporarily independent displacement of said central section so as toassist in medium discharge from said processing chamber.
 5. Apparatus inthe form of a module for transfer and processing of wafers as in claim4, wherein said means for independent displacement of said centralportion at least includes gaseous medium.
 6. Apparatus in the form of amodule for transfer and processing of wafers as in claim 5, including amedium discharge section extending laterally beyond said circumferentialmembrane.
 7. Apparatus in the form of a module for transfer andprocessing wafers as in claim 6, including a gaseous lock chamberextending laterally beyond said gaseous medium discharge section so asto prevent discharge of processing medium laterally outwardly saidmedium discharge passage during processing.
 8. Apparatus in the form ofa module for transfer and processing of wafers as in claim 4, saidchamber blocks including a central section defining a processing mediumsupply passage.
 9. Apparatus in the form of a module for transfer andprocessing of wafers as in claim 8, wherein said processing mediumincludes gaseous media.
 10. Apparatus in the form of a module fortransfer and processing of wafers as in claim 9, wherein said processingmedium includes a mixture of both gaseous and vaporized media. 11.Apparatus in the form of a module for transfer and processing of wafersas in claim 9, wherein said processing medium includes a mixture ofgaseous and liquid media.
 12. Apparatus in the form of a module fortransfer and processing of wafers as in claim 9, wherein said processingmedium includes both gaseous and liquid phase.
 13. Apparatus in the formof a module for transfer and processing of wafers as in claim 9, whereinsaid apparatus interfaces with wafer handling devices.
 14. Apparatus inthe form of a module for transfer and processing of wafers as in claim9, wherein said apparatus is adapted for at least one of the following:cleaning, etching, developing, stripping, dopant processing,lithographic application of coating, chemical deposition, physical vapordepositions, high temperature evaporation, deposition of coatings andoven baking.
 15. A method of processing wafers comprising:a. defining awafer processing chamber of variable height by means of a fixed sectionand a reciprocating section; b. at least temporarily circumferentiallysealing said chamber with a flexible membrane intermediate said fixedand reciprocating sections; c. supplying pressurized gaseous medium intosaid processing chamber so as to double float a wafer being processedtherein, while; d. vibrating said processing chamber by reciprocatingone of said chamber blocks with respect to another of said chamberblocks.
 16. A method of processing wafers as in claim 15, wherein saidreciprocating of one of said chamber blocks is accomplished by means ofpressurized fluid successively supplied to and discharged from apulsator chamber defined aside said reciprocating block.
 17. A method ofprocessing wafers as in claim 16, wherein said reciprocating isaccomplished by vibrating action of a hydraulic pulsator.
 18. A methodof processing wafers as in claim 17, wherein said pressurized gaseousmedium supplied into said processing chamber provides at leasttemporarily a contact free double floating condition for said waferwithin said processing chamber.
 19. A method of processing wafers as inclaim 17, including at least temporarily laterally outwardly dischargingprocessing medium from said processing chamber beyond said flexiblemembrane.
 20. A method of processing wafers as in claim 19, furtherincluding providing a gaseous lock laterally beyond said circumferentialdischarge so as to prevent outward discharge of gaseous medium duringprocessing and discharging.
 21. A method of processing wafers as inclaim 19, including at least temporarily providing a supplementarygaseous medium discharge thrust on said reciprocating chamber block asan assistance in processing medium discharge from said chamber.
 22. Amethod of processing wafers as in claim 21, wherein said processingmedium includes gaseous medium.
 23. A method of processing wafers as inclaim 22, wherein said processing medium includes both gaseous andliquid medium.
 24. A method of processing wafers as in claim 22, whereinsaid processing medium includes a mixture of gaseous and vaporizedmedium.
 25. A method of processing wafers as in claim 22, wherein saidprocessing medium includes both vapor and liquid phase.
 26. A method ofprocessing wafers as in claim 15, wherein said processing includes atleast one of the following: cleaning, etching, developing, strippingdopant processing, deposition and oven bake.
 27. Apparatus in the formof a module for transfer and processing of wafers comprising:a. asupporting base; b. a combination of lower chamber block and upperchamber block, superposed upon said base so as to define a waferprocessing chamber between the chamber blocks; c. a reciprocal walldefined in at least one of said chamber blocks so as to abut a portionof said processing chamber. d. a wafer supply device supported adjacenteach said chamber block for transfer of successive wafers into saidprocessing chamber; e. a wafer discharge device supported adjacent eachsaid chamber block for transfer of successive wafers from saidprocessing chamber; f. a circumferential membrane arranged along theperiphery of said wafer processing chamber, so as to at leasttemporarily seal said processing chamber circumference; and g. apulsator attached to said reciprocal wall so as to reciprocate a portionof one said chamber block and thereby vary the height of said processingchamber during processing.